gf1a, gf1b, gf1d, gf1g, gf1j, gf1k, gf1m www.vishay.com vishay semiconductors revision: 14-aug-13 1 document number: 88617 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount glass passivated rectifier features ? superectifier structure for high reliability condition ? ideal for automated placement ? low forward voltage drop ? low leakage current ? high forward surge capability ? meets environmental standard mil-s-19500 ? meets msl level 1, per j-st d-020, lf maximum peak of 250 c ? aec-q101 qualified ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in general purpose rect ification of power supplies, inverters, converters and freewheeling diodes for consumer, automotive and telecommunication. mechanical data case: do-214ba, molded epoxy over glass body ? molding compound meets ul 94 v-0 flammabi lity rating ? base p/n-e3 - rohs-co mpliant, commercial grade ? base p/nhe3 - rohs-compliant, aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? e3 suffix meets jesd 201 class 1a whisker test, he3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes cathode end primary characteristics i f(av) 1.0 a v rrm 50 v, 100 v, 200 v, 400 v, 600 v, 800 v, 1000 v i fsm 30 a v f 1.1 v, 1.2 v i r 5.0 a t j max. 175 c package do-214ba (gf1) diode variatio ns single die do-214ba (gf1) superectifier ? maximum ratings (t a = 25 c unless otherwise noted) parameter symbol gf1a gf1b gf1d gf1g gf1j gf1k gf1m unit device marking code ga gb gd gg gj gk gm max. repetitive pe ak reverse voltage v rrm 50 100 200 400 600 800 1000 v max. rms voltage v rms 35 70 140 280 420 560 700 v max. dc blocking voltage v dc 50 100 200 400 600 800 1000 v max. average forward rectified current at t l = 125 c i f(av) 1.0 a peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on rated load i fsm 30 a operating junction and storage temperature range t j , t stg - 65 to + 175 c
gf1a, gf1b, gf1d, gf1g, gf1j, gf1k, gf1m www.vishay.com vishay semiconductors revision: 14-aug-13 2 document number: 88617 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) thermal resistance from junction to ambien t and from junction to lead, pcb mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas note (1) aec-q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - non-repetitive peak forward surge current electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol gf1a gf1b gf1d gf1g gf1j gf1k gf1m unit max. instantaneous forward voltage 1.0 a v f 1.1 1.2 v max. dc reverse current at rated dc blocking voltage t a = 25 c i r 5.0 a t a = 125 c 50 typical reverse recovery time i f = 0.5 a, i r = 1.0 a, ? i rr = 0.25 a t rr 2.0 s typical junction capa citance 4.0 v, 1 mhz c j 15 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol gf1a gf1b gf1d gf1g gf1j gf1k gf1m unit typical thermal resistance (1) r ? ja 80 c/w r ? jl 26 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode gf1j-e3/67a 0.104 67a 1500 7" diam eter plastic tape and reel gf1j-e3/5ca 0.104 5ca 6500 13" diam eter plastic tape and reel gf1jhe3/67a (1) 0.104 67a 1500 7" diameter plastic tape and reel gf1jhe3/5ca (1) 0.104 5ca 6500 13" diameter plastic tape and reel 0 100 130 110 120 140 150 160 180 0.50 1.00 60 hz resistive or inductive load lead temperature (c) 1.25 0.75 0.25 170 average forward rectified current (a) p.c.b. mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas t p , pulse width (ms) peak forward surge current (a) 0.1 10 100 1000 10 1 sine waveform, t a = 25 c
gf1a, gf1b, gf1d, gf1g, gf1j, gf1k, gf1m www.vishay.com vishay semiconductors revision: 14-aug-13 3 document number: 88617 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse characteristics fig. 5 - typical j unction capacitance fig. 6 - typical transient thermal impedance package outline dimensions in inches (millimeters) 10 1 0.1 0.01 0.4 0.6 1.4 1.6 0.8 1.0 1.2 pulse width = 300 s 1 % duty cycle t j = 25 c instantaneous forward voltage (v) instan taneous forward current (a) 0.1 1 10 0.01 20 0 100 40 60 80 t j = 25 c t j = 100 c percent of rated peak reverse voltage (%) instantaneous reverse leakage current (a) 1 100 10 30 1 10 reverse voltage (v) junction capaci tance (pf) t j = 25 c f = 1.0 mhz v sig = 50 mv p-p 0.01 100 10 100 0.1 0.1 1 10 1 mounted on 0.2" x 0.27" (5.0 mm x 7.0 mm) copper pad areas transient thermal impedan ce (c/w) t - pulse duration (s) 0.167 (4.24) 0.187 (4.75) 0.0065 (0.17) 0.015 (0.38) 0.030 (0.76) 0.060 (1.52) 0.196 (4.98) 0.226 (5.74) 0.094 (2.39) 0.114 (2.90) 0.100 (2.54) 0.118 (3.00) 0.040 (1.02) 0.066 (1.68) 0.098 (2.49) 0.108 (2.74) 0.006 (0.152) typ. do-214ba (gf1) 0.076 (1.93) max. 0.220 (5.58) ref. 0.060 (1.52) min. mounting pad layout cathode band 0.066 (1.68) min.
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